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4 edition of Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers found in the catalog.

Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers

Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English


Edition Notes

Other titlesSite competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers.
StatementD.J. Larkin.
SeriesNASA-TM -- 112474., NASA technical memorandum -- 112474.
ContributionsUnited States. National Aeronautics and Space Administration.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL17592981M
OCLC/WorldCa42818058


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Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers Download PDF EPUB FB2

3 Epilayer Doping Doping during CVD epitaxial growth is primarily accomplished by the introduction of nitrogen (from N or NH), phosphorous (from PH) and arsenide (from AsH) for n-type, and aluminum (from AlCl or trimethyl- or triethyl aluminum), boron (from B H), and gallium (from trimethyl gallium) for p-type of these dopants were first investigated in the s.

Site competition epitaxy9allows for controlling background dopant incorporation into SiC by adjusting the C/Si ratio. Nitrogen (n-type dopant) competes for C sites and aluminum (p-type dopant) competes for Si sites of the growing SiCepilayer.

Increasing C/Si ratio decreasesCited by: An illustration of an open book. Books. An illustration of two cells of a film strip. Video. An illustration of an audio speaker. Audio. An illustration of a " floppy disk. Software. An illustration of two photographs. Full text of "Site-Competition Epitaxy for Superior Silicon Carbide Electronics".

The doping mechanism of nitrogen and the dependence of site-competition epitaxy on the flow rate of H2 carrier gas were studied for 6H-SiC epitaxial layers grown by chemical vapor deposition.

We report on the initial investigations of using site-competition epitaxy to control boron incorporation in chemical vapor deposition (CVD) 6H-SiC epilayers.

for n-type and p-type Dopant. Site competition epitaxy9) enables the control of impurity incorporation into SiC by adjusting the C/Si ratio.

Nitrogen (n-dopant) competes for C sites and boron (p-dopant) competes for Si sites of the SiC epilayer. Increasing the C/Si ratio decreases nitrogen incorporation, making the epilayer less n-type, while decreasing the C/Si ratio. Site-competition epitaxy is an advancement for the control of dopant incorporation such as for both p-type and n-type doped epilayers, which has resulted in increased doping range and improved doping reproducibility for the growth of chemical vapor deposition (CVD) SiC epilayers.

Use of site-competition epitaxy will lead to improved device. In situ n-type doping can be easily achieved by the Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers book of N 2 during CVD.

The donor concentration is increased proportionally with the N 2 flow rate over a wide range on both silicon and carbon faces. The higher C/Si ratio leads to the lower nitrogen concentration, which is explained by ‘‘site-competition epitaxy’’ (Larkin et.

Results from utilizing site‐competition epitaxy include the production of degenerately doped SiC epilayers for ohmic‐as‐deposited (i.e., unannealed) metal contacts as well as very low doped. USA US08/, USA USA US A US A US A US A US A US A US A US A US A Authority US United States Prior art keywords crystal element growth dopant crystal element Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.

Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber).

At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD.

The growth mechanism in chemical vapor deposition (CVD) of silicon carbide (SiC) on off‐oriented SiC{} substrates (step‐controlled epitaxy) is reviewed.

In step‐controlled epitaxy, SiC growth is controlled by the diffusion of reactants in a stagnant layer. The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process.

It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.

A systematic n-type doping study has been performed on 4H- and 6H-SiC epilayers grown at high growth rate using chloride-based CVD. The effect of temperature, pressure, growth rate, C/Si and Cl/Si. It is necessary to underline that for crystalline SiC films prepared by CVD processes, the site-competition epitaxy model has been shown as an efficient method to control in situ doping.

This model is based on the variation of the Si/C ratio within the CVD reactor in order to control the dopant. A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate.

The resultant silicon carbide epitaxial film has superior morphological and material properties. The diffusion of the n-type dopants clearly exceeds the diffusion of the p-type dopants. Moreover, donor diffusion exceeds Ge self-diffusion and increases from P to Sb.

On the other hand, the diffusion of the p-type dopants is very similar to self-diffusion and in the case of B 38–41 C. Janke, R. Jones, S. Öberg, and P. Briddon, J. A systematic p-type doping study has been performed on 4H- and 6H-silicon carbide (SiC) epilayers grown at high growth rate using chloride-based chemical vapor deposition.

Intentional n and p-type doping has been demonstrated over the carrier range 1××/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.

A systematic p-type doping study has been performed on 4H- and 6H-silicon carbide (SiC) epilayers grown at high growth rate using chloride-based chemical vapor deposition.

The effect of temperature, pressure, growth rate, C/Si- Cl/Si-ratios and dopant flow on the incorporation of the acceptor atoms aluminum and boron has been studied.

Growth of very pure SiC with a net doping density less than 5 × 10 13 /cm 3 and wide-range control of both n-type (nitrogen doping, 10 14 –10 19 /cm 3) and p-type (aluminum doping, 10 14 –10 20 /cm 3) doping have been achieved using the site-competition effect and. A second goal of this work is to examine alternative n-type dopants in GaN.N-type doping of GaN during growth [10,11] or by ion implantation [12] has primarily been done using Si which is reported to have a donor ionization level between and meV [ 11, 0 is of particular interest as a possible alternative n-type dopant due to its position next to N.

As shown in Fig. 5, epilayers grown with C/Si > were found to be p-type and the doping density increased with larger C/Si ratios, while epilayers grown with C/Si n-type. This doping dependence behavior was also previously reported for other halide chemistries [15] and silane–propane epitaxy.

doping with C led to p-type conductivity.7 In this letter we report on photoluminescence investiga-tions of wurtzite GaN grown on c-plane 6H-SiC andr-plane sapphire by high temperature vapor phase epitaxy ~HTVPE!.8 The layers were nominally undoped, n-type, and had free carrier concentrations ranging between 13 cm23 and cm The.

In-situ doping during CVD epitaxial growth is primarily accomplished through the introduction of nitrogen (usually N2) for n-type and aluminum (usually trimethyl- or triethylaluminum) for p-type epilayers [10,59].

Some alternative dopants such as phosphorus and boron have also been investigated for the n-and p-type epilayers, respectively [59,60]. An important observation on in situ aluminum doping in SiC is that according to the site-competition epitaxy model, the Al dopant incor‐ poration has been found to be inversely related to the Si/C ratio within the CVD reactor.

This behavior is opposite to that observed in nitrogen incorporation in SiC (Larkin, ). Abstract: After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were.

Experimental results are reported for boron-doping of 6H and 4H silicon carbide epitaxial layers from a solid boron-nitride source. The purpose of these experiments is to demonstrate close compensation of the resulting CVD grown epitaxial layers by adjusting a single growth parameter, namely, the average ratio of silicon to carbon in the precursor gases during growth (i.e.

site-competition. n-type Semiconductors. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons.

Growth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiC. Nigam, S Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC. Wellmann, P. / Queren, D. / Muller, R Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar.

Home > Research & Engineering > Silicon Carbide Electronics and Sensors. Publications. Many of the technical publications of the NASA Glenn Smart Sensors and Electronics Systems Branch are listed below with links needed to view each work.

These technical publications are posted on this site in order to ensure timely public dissemination of NASA. For a CVD process, the fluid flow must be of laminar fashion to avoid intermixing of gas concentrations [43] For example, when switching from a p-type dopant source to an n-type dopant source during growth to produce an abrupt pn-junction, one does not want th e two dopant source s to intermix.

The preparation of SiC crystals doped with various impurities introduced during the process of sublimation growth and diffusion is described. The growth of SiC crystals was carried out by a sublimation-sandwich method, proposed by us in Crystals of the n- and p-type conductivity with maximum content of electrically active impurities (of the order of cm−3) were obtained.

(°) CVD of SiC has gained interest in the last years for being less demanding in terms of reaction chamber lifetime, but also for allowing higher p-type dopant incorporation. Chloride-based CVD at low temps. was studied using chloromethane with tetrachlorosilane or silane, resp. and with or without controlled HCl addn.

However, a recently reported chemical vapor deposition (CVD) growth technique known as site-competition epitaxy is capable of growing 6H-SiC epitaxial layers with much reduced shallow background densities ({approximately} 3 {times} 10{sup 15} cm{sup {minus}3}). The silicon carbide epitaxial material of cl doped with an n-type and/or a p-type dopant species at a dopant concentration of from about 1×10 18 to about 1×10 21 atoms cm A 4H--SiC epilayer film grown on a () 4H--SiC substrate offcut towards the crystalline direction of the substrate, wherein said epilayer film has a.

main page Layered Structures, Epitaxy, and Interfaces Volume Layered Structures, Epitaxy, and Interfaces Volume giho 0 Comments. Layered structures, epitaxy, and interfaces (Conference) Silicon carbide (SiC), a material long known to have potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature wide bandgap ( eV ≤ E g ≤ eV) semiconductor since the release of commercial 6H-SiC bulk substrates in and 4H-SiC substrates in The p-type and n.

ISBN: OCLC Number: Description: xxiv, pages: illustrations ; 25 cm. Contents: Quality Aspects for the Production of SiC Bulk CrystalsAn Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport MethodGrowth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials StudiesGrowth and.

Annealed Ni for n-type SiC or Al for p-type have been extensively used to obtain ohmic contacts with low contact resistivity [70, 71], while Au [71], Ti [71], Pt [72], or Al [73] have been studied to obtain Schottky barriers. Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC.R.

Arvinte, “ Investigation of dopant incorporation in silicon carbide epilayers grown by chemical vapor deposition,” Ph.D. thesis (Universite Cote d’Azur, ). Google Scholar   The N-type doping is usually carried out with nitrogen. Nitrogen incorporation has been found to be enhanced by Si-rich gas phase, because N atoms substitute C sites in SiC lattice.

P-type doping is less common in literature but is nevertheless very .